Gamma-ray radiation effects in graphene-based transistors with h-BN nanometer film substrates-Reference-Cited by-同舟云学术

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Gamma-ray radiation effects in graphene-based transistors with h-BN nanometer film substrates

Published:2019-11-25 Issue:22 Volume:115 Page:223504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cazalas E.¹²^ORCID,Hogsed M. R.¹,Vangala S.³,Snure M. R.³,McClory J. W.¹

Affiliation:

1. Department of Engineering Physics, Air Force Institute of Technology, Wright-Patterson Air Force Base, Ohio 45433, USA

2. Nuclear Engineering Program, Department of Civil and Environmental Engineering, University of Utah, Salt Lake City, Utah 84112, USA

3. Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA

Funder

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5127895

Reference31 articles.

1. A decade of graphene research: production, applications and outlook

2. Graphene-based materials in electrochemistry

3. Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on SiO2Substrates using Raman Spectroscopy

4. Modulation of graphene field effect by heavy charged particle irradiation

5. Graphene Field-Effect Transistors on Undoped Semiconductor Substrates for Radiation Detection

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1. First-principles study on the differences in mechanical and optoelectronic properties between monolayer graphene and AA bilayer graphene after neutron irradiation;Physica B: Condensed Matter;2024-10

2. First-principles study on the microstructure, band structure, mechanical and optical properties of AB-stacked bilayer graphene under constant neutron irradiation with different electric field magnitudes and directions;Materials Today Communications;2024-08

3. First-principles study on the effects of fast neutron irradiation and fast neutron irradiation under the external electric field on carbon-based material AB bilayer graphene;Diamond and Related Materials;2024-04

4. Radiation-induced degradation of silicon carbide MOSFETs – A review;Materials Science and Engineering: B;2024-02

5. Advanced nano boron nitride architectures: Synthesis, properties and emerging applications;Nano Today;2023-12

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