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Formation of a new deep emission in Si+, S+, Se+, and Te+ion‐implanted GaAs

  • Published:1986-02-03 Issue:5 Volume:48 Page:329-331
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Makita Yunosuke,Takeuchi Yoshinori,Nomura Toshio,Tanaka Hideki,Kanayama Toshihiko,Tanoue Hisao,Irie Katsuhiro,Ohnishi Nobukazu

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical and electrical properties of Si+ ion-implanted GaAs;Materials Science and Engineering: A;1998-09

2. Novel features of photoluminescence spectra from acceptor-doped GaAs: formation of acceptor—acceptor pair emissions and optical compensation effect;Materials Science and Engineering: R: Reports;1996-06

3. Properties of Mn+-implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06

4. FORMATION OF NEW PAIR-LIKE EMISSIONS BETWEEN DEFECTS AND DONOR-IMPURITIES IN Ge-DOPED GaAs GROWN BY MBE, ANNEALED AT HIGH TEMPERATURES;Defect Control in Semiconductors;1990

5. Shallow-acceptor isoelectronic-impurity complexes in GaAs;Solid State Communications;1988-09
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