Scanning-tunneling-microscopy observation of heterojunctions with a type-II band alignment in ZnSe∕BeTe multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1897055
Reference14 articles.
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5. Microstructure of the GaSb-on-InAs heterojunction examined with cross-sectional scanning tunneling microscopy
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1. Analysis of the influencing factors of transmission coefficients based on ZnSe/BeTe heterojunction;Journal of Physics: Conference Series;2024-07-01
2. Cleavage induced rows of missing atoms on ZnTe (110) surface;Physical Review B;2013-02-14
3. Modeling with Hybrid Density Functional Theory the Electronic Band Alignment at the Zinc Oxide–Anatase Interface;The Journal of Physical Chemistry C;2012-08-24
4. Composition fluctuations in InP/GaInAs/InP heterostructures –X-ray CTR scattering and cross-sectional STM measurements;IOP Conference Series: Materials Science and Engineering;2011-09-19
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