Nitrogen incorporation into GaInNAs lattice-matched to GaAs: The effects of growth temperature and thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2112173
Reference17 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Annealing behavior of p-type Ga0.892In0.108NxAs1−x (0⩽X⩽0.024) grown by gas-source molecular beam epitaxy
3. GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm
4. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
5. Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy
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1. Hot carrier redistribution, electron-phonon interaction, and their role in carrier relaxation in thin film metal-halide perovskites;Physical Review Materials;2021-09-15
2. 1 meV electron irradiation and post-annealing effects of GaInAsN diluted nitride alloy with 1 eV bandgap energy;Thin Solid Films;2020-09
3. Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications;Semiconductor Science and Technology;2020-08-17
4. 150 KeV proton irradiation effects on photoluminescence of GaInAsN bulk and quantum well structures;Optical Materials;2019-11
5. Study of GaAsSb:N bulk layers grown by liquid phase epitaxy for solar cells applications;Materials Research Express;2019-04-24
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