Two‐dimensional electron gas in In0.53Ga0.47As/InP heterojunctions grown by atmospheric pressure metalorganic chemical‐vapor deposition-Reference-Cited by-同舟云学术

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Two‐dimensional electron gas in In0.53Ga0.47As/InP heterojunctions grown by atmospheric pressure metalorganic chemical‐vapor deposition

Published:1985-10-15 Issue:8 Volume:58 Page:3145-3149
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhu L. D.,Sulewski P. E.,Chan K. T.,Muro K.,Ballantyne J. M.,Sievers A. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.335818

Reference18 articles.

1. High Electron Mobility Transistor Logic

2. Magneto-Oscillatory Conductance in Silicon Surfaces

3. Screening Effect and Quantum Transport in a Silicon Inversion Layer in Strong Magnetic Fields

4. Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Column III;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

2. Indium Triorganyls;In Organoindium Compounds;1991

3. Two‐dimensional electron gas magnetic field sensors;Applied Physics Letters;1990-07-16

4. Chapter 2 Characteristics of Two-Dimensional Electron Gas in III-V Compound Heterostructures Grown by MBE;Very High Speed Integrated Circuits: Heterostructure;1990

5. References;Thin Films by Chemical Vapour Deposition;1990

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