Spin–orbit torque induced magnetization switching in the W/CoFeB/Zr/MgO multilayers with high thermal stability-Reference-Cited by-同舟云学术

Spin–orbit torque induced magnetization switching in the W/CoFeB/Zr/MgO multilayers with high thermal stability

Published:2023-11-01 Issue:11 Volume:11 Page:
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:

Author:

Guo Q. X.¹²^ORCID,Zheng Z. C.²,Wang L. H.³^ORCID,Wang K.²,Wang X. M.⁴,Cheng S.⁵^ORCID,He W.¹,Yu G. H.²,Lee H.-W.⁶^ORCID,Guo Y. Q.⁵⁷,Teng J.²^ORCID,Zhu T.¹⁵⁷^ORCID

Affiliation:

1. Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences 1 , Beijing 100190, China

2. Department of Materials Physics and Chemistry, University of Science and Technology Beijing 2 , Beijing 100083, China

3. Institute of Microstructure and Property of Advanced Materials, Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology 3 , Beijing 100124, China

4. Collaborative Innovation Center of Advanced Steel Technology, University of Science and Technology Beijing 4 , Beijing 100083, China

5. Spallation Neutron Source Science Center 5 , Dongguan 523803, China

6. Department of Physics, Pohang University of Science and Technology 6 , Pohang 37673, Republic of Korea

7. Songshan Lake Materials Laboratory 7 , Dongguan 523808, China

Abstract

We demonstrate the spin–orbit torque (SOT) induced perpendicular magnetization switching in an annealed W/CoFeB/Zr/MgO multilayer with high thermal stability. It is found that the thermal stability factor can reach 79 after annealing at 540 °C. With an increase in the annealing temperature, the absolute damping-like efficiency almost keeps a high constant value (about 0.3). The tungsten in the W/CoFeB/Zr/MgO multilayer could convert from the high resistive β-W to a mediate resistive amorphous-like structure. Therefore, the absolute spin Hall conductance increases from 765 of β-W to 1420 (ℏ/e)(Ω cm)−1 of the amorphous-like tungsten. These results pave a realistic way for the practical application of tungsten in the SOT-based spintronics devices with high thermal stability and SOT efficiency.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Beijing Outstanding Young Talents

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://pubs.aip.org/aip/apm/article-pdf/doi/10.1063/5.0168705/18230185/111126_1_5.0168705.pdf

Reference46 articles.

1. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection;Miron;Nature,2011

2. Current-induced switching of perpendicularly magnetized magnetic layers using spin torque from the spin Hall effect;Liu;Phys. Rev. Lett.,2012

3. Spin-torque switching with the giant spin Hall effect of tantalum;Liu;Science,2012

4. Spin transfer torque devices utilizing the giant spin Hall effect of tungsten;Pai;Appl. Phys. Lett.,2012

5. Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO;Kim;Nat. Mater.,2013