Resistive switching in a LaMnO3 + δ/TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

Resistive switching in a LaMnO3 + δ/TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy

Published:2019-12-14 Issue:22 Volume:126 Page:225302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Meunier Benjamin¹^ORCID,Martinez Eugénie²,Rodriguez-Lamas Raquel¹^ORCID,Pla Dolors¹,Burriel Mònica¹^ORCID,Boudard Michel¹^ORCID,Jiménez Carmen¹^ORCID,Rueff Jean-Pascal³⁴^ORCID,Renault Olivier²^ORCID

Affiliation:

1. Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France

2. Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, France

3. Synchrotron-SOLEIL, BP 48, Saint-Aubin, F-91192 Gif-sur-Yvette, France

4. Laboratoire de Chimie Physique—Matière et Rayonnement (LCPMR), Sorbonne Université, CNRS, F-75005 Paris, France

Funder

Agence Nationale de la Recherche

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5125420

Reference34 articles.

1. Colossal electroresistance mechanism in aAu∕Pr0.7Ca0.3MnO3∕Ptsandwich structure: Evidence for a Mott transition

3. Structural and electronic properties ofSrZrO3and Sr(Ti,Zr)O3alloys

4. Effect of oxygen annealing on Pr0.7Ca0.3MnO3 thin film for colossal electroresistance at room temperature

5. Electric-pulse-induced reversible resistance change effect in magnetoresistive films

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