Rearrangement of the oxide-semiconductor interface in annealed Al2O3∕4H-SiC structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2757608
Reference11 articles.
1. Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates
2. Band alignment and defect states at SiC/oxide interfaces
3. Sequential surface chemical reaction limited growth of high quality Al2O3dielectrics
4. Comparison of near-interface traps in Al2O3∕4H-SiC and Al2O3∕SiO2∕4H-SiC structures
5. High Temperature Annealing Study of Al2O3 Deposited by ALCVD on n-Type 4H-SiC
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1. Adhesion and electronic properties of 4H-SiC/α-Al2O3 interfaces with different terminations calculated via first-principles methods;Surfaces and Interfaces;2023-10
2. High-k dielectrics for 4H-silicon carbide: present status and future perspectives;Journal of Materials Chemistry C;2021
3. Effect of post deposition annealing and post metallization annealing on electrical and structural characteristics of Pd/Al2O3/6H-SiC MIS capacitors;Microelectronics International;2018-04-03
4. Statistics-Based Analysis of the Evolution of Structural and Electronic Properties of Realistic Amorphous Alumina During the Densification Process: Insights from First-Principles Approach;The Journal of Physical Chemistry C;2017-10-30
5. Decoupling the Effects of Mass Density and Hydrogen-, Oxygen-, and Aluminum-Based Defects on Optoelectronic Properties of Realistic Amorphous Alumina;The Journal of Physical Chemistry Letters;2017-05-22
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