Solid phase epitaxial growth of high mobility La:BaSnO3 thin films co-doped with interstitial hydrogen-Reference-Cited by-同舟云学术

Solid phase epitaxial growth of high mobility La:BaSnO3 thin films co-doped with interstitial hydrogen

Author:

Niedermeier Christian A.¹²,Rhode Sneha¹,Fearn Sarah¹,Ide Keisuke²,Moram Michelle A.¹,Hiramatsu Hidenori²³,Hosono Hideo²³,Kamiya Toshio²³

Affiliation:

1. Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom

2. Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

3. Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

Funder

TokyoTech Advanced Research (STAR)

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference30 articles.

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