In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system-Reference-Cited by-同舟云学术

In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system

Published:2013-03-11 Issue:10 Volume:102 Page:102107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lin Chun-Cheng,Chang Chia-Chiang,Wu Chin-Jyi,Tseng Zong-Liang,Tang Jian-Fu,Chu Sheng-Yuan,Chen Yi-Chun,Qi Xiaoding

Funder

National Science Council Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4795525

Reference32 articles.

1. Thin film zinc oxide transducers for use in microwave devices

2. dc triode sputtered zinc oxide surface elastic wave transducers

3. ZnO films for surface acoustooptic devices on nonpiezoelectric substrates

4. Enhanced electromechanical response of Fe-doped ZnO films by modulating the chemical state and ionic size of the Fe dopant

5. The influence of different doping elements on microstructure, piezoelectric coefficient and resistivity of sputtered ZnO film

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