Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3116716
Reference28 articles.
1. Spintronics: A Spin-Based Electronics Vision for the Future
2. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
3. Ferromagnetic Order Induced by Photogenerated Carriers in Magnetic III-V Semiconductor Heterostructures of (In,Mn)As/GaSb
4. Ultrafast Enhancement of Ferromagnetism via Photoexcited Holes in GaMnAs
5. Electric-field control of ferromagnetism
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1. Role of resident electrons in the manifestation of a spin polarization memory effect in Mn delta-doped GaAs heterostructures;Physical Review B;2021-09-23
2. Revealing angular momentum transfer channels and timescales in the ultrafast demagnetization process of ferromagnetic semiconductors;Proceedings of the National Academy of Sciences;2019-09-09
3. Manganese spin relaxation in ferromagnetic (Ga,Mn)As;Low Temperature Physics;2017-04
4. Manganese spin dephasing mechanisms in ferromagnetic (Ga,Mn)As;Physical Review B;2015-12-01
5. Ultrafast probes of nonequilibrium hole spin relaxation in the ferromagnetic semiconductor GaMnAs;Physical Review B;2015-04-08
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