Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1643532
Reference10 articles.
1. DC and low-frequency noise characteristics of SiGe p-channel FETs designed for 0.13-μm technology
2. A study of noise in surface and buried channel SiGe MOSFETs with gate oxide grown by low temperature plasma anodization
3. Low-Frequency Noise in Si1-xGexp-Channel Metal Oxide Semiconductor Field-Effect Transistors
4. High performance Si/SiGe heterostructure MOSFETs for low power analog circuit applications
5. On the origin of the LF noise in Si/Ge MOSFETs
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