Spatially distributed gains in semiconductor lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101321
Reference16 articles.
1. Gain, polarisation sensitivity and saturation power of 1.5 μm near-travelling-wave semiconductor laser amplifier
2. 1.5 µm GaInAsP traveling-wave semiconductor laser amplifier
3. Atomes à I’Intérieur d’un Interféromètre Perot-Fabry
4. Spectral Characteristics of GaAs Lasers Operating in ``Fabry‐Perot'' Modes
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1. Differential gain, refractive index and linewidth enhancement factor in broad-area semiconductor optical amplifiers;SPIE Proceedings;1998-12-04
2. Gain, refractive index, and /spl alpha/-parameter in InGaAs-GaAs SQW broad-area lasers;IEEE Photonics Technology Letters;1996-03
3. Improved method for gain/index measurements of semiconductor lasers;Electronics Letters;1996
4. Diagnostics of asymmetrically coated semiconductor lasers;IEEE Photonics Technology Letters;1991-07
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