A multi-state memory device based on the unidirectional spin Hall magnetoresistance
Author:
Affiliation:
1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
2. Department of Materials, ETH Zürich, CH-8093 Zürich, Switzerland
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4983784
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