Author:
N. Shylashree,V. Uma B.,S. Dhanush,Abachi Sagar,A. Nisarga,K. Aashith,G. Sangeetha B.
Reference10 articles.
1. Simone Raoux, Feng Xiong, Matthias Wuttig, and Eric Pop, “Phase change materials and phase change memory.” MRS Bulletin, Vol. 39, 2015.
2. M. Malligavathy, R.T. Ananth Kumar, Chandasree Das, S. Asokan “Growth and characteristics of amorphous Sb2Se3 thin films of various thicknesses for memory switching applications”
3. Reliability Study of Phase-Change Nonvolatile Memories
4. Sung-Min Yoon, Nam-Yeal Lee, Sang-Ouk Ryu, Kyu-Jeong Choi, Young-Sam Park, Seung-Yun Lee, Byoung-Gon Yu, Myung-Jin Kang, Se-Young Choi, and Matthis Wuttig, “Sb–Se-Based Phase-Change Memory Device With Lower Power and Higher Speed Operations”, IEEE electron device letters, VOL. 27, NO. 6, JUNE 2006.
5. C.H. Sie, R. Uttecht, H. Stevenson, J. D. Griener and K. Raghavan, “Electric-Field Induced Filament Formation in As-Te-Ge Semiconductor”, Journal of Non-Crystalline Solids, Vol. 10, 2010, pp. 358–37
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献