Nonradiative ’’large dark spots’’ in AlxGa1−xAs‐GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.324229
Reference7 articles.
1. Macroscopic deterioration of fluorescence from AlxGa1−xAs–GaAs DH material following microscopic physical damage
2. Variation of minority‐carrier diffusion length with carrier concentration in GaAs liquid‐phase epitaxial layers
3. Elastically enhanced nonradiative recombination at AlxGa1−xAs‐GaAs heterointerface
4. The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] Solution
5. Integrated GaAs-AlxGa1-xAs double-heterostructure laser with independently controlled optical output divergence
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2. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
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4. The Effect of Al0.7Ga0.3As Etch Stop Removal on the Preparation of Wafer‐Bonded Compliant Substrates;Journal of The Electrochemical Society;1999-04-01
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