Infrared p-i-n photodiodes based on InAs quantum dots grown on 20 nm patterned GaAs-Reference-Cited by-同舟云学术

Infrared p-i-n photodiodes based on InAs quantum dots grown on 20 nm patterned GaAs

Published:2009-04-20 Issue:16 Volume:94 Page:163112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Alizadeh Azar,Hays David,Keimel Chris,Watkins Vicki H.,Conway Ken R.,Taylor Seth T.,Neander Rosalyn,Denault Lauraine,deSouza Christina,Saveliev Igor,Blumin Marina,Ruda Harry E.,Braunstein Edit,Jones Colin

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3111159

Reference25 articles.

1. Quantum-Dot Infrared Photodetectors

2. High-Temperature Tunneling Quantum-Dot Intersublevel Detectors for Mid-Infrared to Terahertz Frequencies

3. High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature

4. Quantum Dot Based Infrared Focal Plane Arrays

5. InP-Based Quantum-Dot Infrared Photodetectors With High Quantum Efficiency and High-Temperature Imaging

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