Effects of boron profiles on the open circuit voltage ofp‐i‐nandn‐i‐pamorphous silicon solar cells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96861
Reference3 articles.
1. Origin of the difference in the open circuit voltage betweenp‐i‐ntype andn‐i‐ptype hydrogenated amorphous silicon solar cells
2. Tunneling Contributions to NiP and Pin Hydrogenated Amorphous Silicon Devices
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