Electronic properties of heteroepitaxial undoped and n-InSb epilayers using SnTe source by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1476086
Reference20 articles.
1. Molecular beam epitaxial growth of high quality InSb
2. Heteroepitaxial molecular beam epitaxial InSb and room temperature operation of its metal-insulator-semiconductor field-effect transistors
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5. Growth and characterization of indium antimonide doped with lead telluride
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1. Intrinsic broadening of the mobility spectrum of bulk n-type GaAs;New Journal of Physics;2014-11-14
2. Molecular beam epitaxial growth and characterization of InSb1 − xNx on GaAs for long wavelength infrared applications;Journal of Applied Physics;2012-04-15
3. Low temperature Hall effect studies of InSb thin films grown by flash evaporation;The European Physical Journal Applied Physics;2011-04
4. Low frequency noise in InSb/GaAs and InSb/Si channels;Applied Physics Letters;2010-09-06
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