Direct measurement of ambipolar diffusion in bulk silicon by ultrafast infrared imaging of laser-induced microplasmas
Author:
Affiliation:
1. Aix-Marseille University, CNRS, LP3 UMR 7341, F-13288 Marseille, France
2. Galatea Lab, STI/IMT, Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2002 Neuchâtel, Switzerland
Funder
Agence Nationale de la Recherche (ANR)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4941031
Reference17 articles.
1. Two-photon absorption and Kerr coefficients of silicon for 850–2200nm
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5. Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared
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