Tunneling effects and intersubband absorption in AlN/GaN superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1849418
Reference21 articles.
1. Characteristics of InGaN laser diodes in the pure blue region
2. Ultraviolet AlGaN multiple-quantum-well laser diodes
3. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
4. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
5. Intersubband absorption in degenerately doped GaN/AlxGa1−xN coupled double quantum wells
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1. Electronic Transport and Resonant Tunneling Properties of Hyperbolic Pöschl-Teller Double-Barrier Structures;Journal of Computational and Theoretical Transport;2019-02-23
2. Resonant tunneling properties of inverted Morse double quantum barrier;Chinese Journal of Physics;2018-04
3. Effect of Si δ-Doping on the Linear and Nonlinear Optical Absorptions and Refractive Index Changes in InAlN/GaN Single Quantum Wells;Chinese Physics Letters;2016-02
4. Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices;Journal of Applied Physics;2015-12-14
5. Tunnelling and current density in short period strained AlN/GaN superlattices;Physica E: Low-dimensional Systems and Nanostructures;2014-09
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