Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites-Reference-Cited by-同舟云学术

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Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites

Published:2012-03 Issue:5 Volume:111 Page:056106
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Plecenik T.,Tomášek M.,Belogolovskii M.,Truchly M.,Gregor M.,Noskovič J.,Zahoran M.,Roch T.,Boylo I.,Španková M.,Chromik Š.,Kúš P.,Plecenik A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3691598

Reference25 articles.

1. Nanoionics-based resistive switching memories

2. Resistive switching in transition metal oxides

3. Electric pulse-induced resistive switching in ceramic interfaces

4. Studies of resistance switching effects in metal/YBa2Cu3O7−x interface junctions

5. Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition

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