Influence of interfacial oxide on the optical properties of single layer CdTe/CdS quantum dots in porous silicon scaffolds-Reference-Cited by-同舟云学术

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Influence of interfacial oxide on the optical properties of single layer CdTe/CdS quantum dots in porous silicon scaffolds

Published:2015-08-10 Issue:6 Volume:107 Page:063106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gaur Girija¹^ORCID,Koktysh Dmitry S.²³,Fleetwood Daniel M.¹,Weller Robert A.¹,Reed Robert A.¹,Weiss Sharon M.¹

Affiliation:

1. Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37212, USA

2. Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, Tennessee 37212, USA

3. Department of Chemistry, Vanderbilt University, Nashville, Tennessee 37212, USA

Funder

National Science Foundation (NSF)

Defense Threat Reduction Agency (DTRA)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4928663

Reference47 articles.

1. Efficient CdSe/CdS Quantum Dot Light-Emitting Diodes Using a Thermally Polymerized Hole Transport Layer

2. Bright, multicoloured light-emitting diodes based on quantum dots

3. Colloidal quantum-dot light-emitting diodes with metal-oxide charge transport layers

4. High-performance crosslinked colloidal quantum-dot light-emitting diodes

5. Emergence of colloidal quantum-dot light-emitting technologies

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