Ballistic hot-electron transport in a quantum Hall edge channel defined by a double gate
Author:
Affiliation:
1. Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8551, Japan
2. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi 243-0198, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5126776
Reference24 articles.
1. Quantum Transport
2. Quantum Transport in Semiconductor Nanostructures
3. Ballistic electron transport in macroscopic four‐terminal square structures with high mobility
4. Quantized Hall conductance, current-carrying edge states, and the existence of extended states in a two-dimensional disordered potential
5. Quantum Hall Effects
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