Probing the interface strain in a 3D-2D van der Waals heterostructure-Reference-Cited by-同舟云学术

Probing the interface strain in a 3D-2D van der Waals heterostructure

Published:2017-10-09 Issue:15 Volume:111 Page:151603
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sun Xin¹^ORCID,Shi Jian²,Washington Morris A.¹,Lu Toh-Ming¹

Affiliation:

1. Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180-3950, USA

2. Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180-3950, USA

Funder

Empire State Development's Division of Science, Technology and Innovation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5000704

Reference31 articles.

1. Strain-induced band gap shrinkage in Ge grown on Si substrate

2. Enhanced direct bandgap emission in germanium by micromechanical strain engineering

3. Epitaxial Strain and Superconductivity inLa2−xSrxCuO4Thin Films

4. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

5. Nonlinear Electron-Lattice Interactions in a Wurtzite Semiconductor Enabled via Strongly Correlated Oxide

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