Polymerized hybrid Hf-based hydroquinone/Al2O3 bilayer structure by molecular/atomic layer deposition for non-volatile resistive random access memory-Reference-Cited by-同舟云学术

Polymerized hybrid Hf-based hydroquinone/Al2O3 bilayer structure by molecular/atomic layer deposition for non-volatile resistive random access memory

Published:2021-12-01 Issue:12 Volume:9 Page:121110
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Lei Jin¹,Ding Wen-Juan¹²,Liu Chang¹,Wu Di¹^ORCID,Li Wei-Min¹²,Li Ai-Dong¹^ORCID

Affiliation:

1. National Laboratory of Solid State Microstructures, Materials Science and Engineering Department, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People’s Republic of China

2. Jiangsu Leadmicro Nano-Technology Co., Ltd., Wuxi, Jiangsu, People’s Republic of China

Funder

National Natural Science Foundation of China

Foundation Research Project of Jiangsu Province

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0073341

Reference44 articles.

1. Forming-free flexible memristor with multilevel storage for neuromorphic computing by full PVD technique