Homoepitaxial growth of ZnTe by low‐pressure metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342007
Reference20 articles.
1. Self-Compensation Limited Conductivity in Binary Semiconductors. I. Theory
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4. Electrical properties and injection luminescence in ZnSe‐ZnTe heterojunctions prepared by liquid‐phase epitaxy
5. Chemical vapor deposition of zinc chalcogenides using elemental source materials
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2. Growth characteristics of CdZnTe layers grown by metalorganic vapor phase epitaxy using dimethylzinc, dimethylcadmium, diethyltelluride, and dimethyltelluride as precursors;Journal of Electronic Materials;1998-08
3. Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies;Journal of Applied Physics;1997-01-15
4. The metal organic vapour phase epitaxy of ZnTe: I. Properties and decomposition kinetics of organometallics;Progress in Crystal Growth and Characterization of Materials;1995-01
5. Photoluminescence properties of ZnTe layers grown by photo-assisted metalorganic vapor phase epitaxy;Journal of Crystal Growth;1994-12
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