GaAs single‐domain growth on exact (100) Si substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109240
Reference11 articles.
1. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
2. Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)
3. Single Crystal Growth of Superconducting Oxides with the Layered Perovskite Structure
4. Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam Epitaxy
5. The Growth of Single Domain GaAs Films on Double Domain Si(001) Substrates by Molecular Beam Epitaxy
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3. Mid-infrared type-I InAs/In0.83Al0.17As quantum wells grown on GaP and InP by gas source molecular beam epitaxy;Journal of Crystal Growth;2019-04
4. How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches;Semiconductor Science and Technology;2018-08-17
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