Quantum well lasers with active region grown by laser‐assisted atomic layer epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103363
Reference9 articles.
1. AlGaAs multiple‐wavelength light‐emitting bar grown by laser‐assisted metalorganic chemical vapor deposition
2. Monolayer growth and direct writing of GaAs by pulsed laser metalorganic vapor phase epitaxy
3. Direct writing of GaAs monolayers by laser‐assisted atomic layer epitaxy
4. Atomic layer epitaxy of compound semiconductors with metalorganic precursors
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1. ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION FOR OPTOELECTRONIC INTEGRATED CIRCUITS;Integrated Optoelectronics;1995
2. MOLECULAR BEAM EPITAXY WITH GASEOUS SOURCES;Integrated Optoelectronics;1995
3. The Chemistry and Growth of MOVPE-Based Selective Epitaxy;Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates;1995
4. A new technique for fabricating InGaAsP superlattice by laser-assisted metalorganic molecular beam epitaxy;Journal of Crystal Growth;1994-03
5. Lateral band‐gap control of InGaAsP multiple quantum wells by laser‐assisted metalorganic molecular beam epitaxy for a multiwavelength laser array;Applied Physics Letters;1994-02-21
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