Photoluminescence transitions in semiconductor superlattices. Theoretical calculations for InGaN blue laser device
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1565698
Reference21 articles.
1. InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films
2. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes
3. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
5. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
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3. Advances in the calculation of optical properties in superlattices; novel insights derived from the theory of finite periodic systems;Annals of Physics;2018-10
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