Simulation of current‐voltage characteristics of Ti‐W/nSi Schottky diodes using defects parameters extracted from deep level transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348532
Reference10 articles.
1. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
2. The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodes
3. Characterization of RF Sputter‐Deposited Ti‐W Schottky Barrier Diodes in Boron‐Doped Silicon
4. Characterization of defects introduced during dc magnetron sputter deposition of Ti–W on n-Si
5. Characterization of the interface states at a Ag/Si interface from capacitance measurements
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1. Phase transition induced double-Gaussian barrier height distribution in Schottky diode;Physica B: Condensed Matter;2013-12
2. Characteristics of TiNx/n-Si Schottky diodes deposited by reactive magnetron sputtering;Journal of Applied Physics;1999-04-15
3. Low frequency noise measurements on TiN/n-Si Schottky diodes;Applied Surface Science;1999-04
4. Electrical Characterization Of Defects Introduced During Plasma-Based Processing Of GaAs;MRS Proceedings;1996
5. Effect of deep traps on the capacitance‐voltage plots of Schottky barrier diodes: Application to the study of sputter‐etched Ti‐W/n‐Si diodes;Journal of Applied Physics;1993-02-15
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