Self‐consistent calculation of electronic states in AlGaAs/GaAs/AlGaAs selectively doped double‐heterojunction systems under electric fields
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335563
Reference11 articles.
1. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
2. A New AlGaAs/GaAs Heterojunction FET with Insulated Gate Structure (MISSFET)
3. Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System -- a Novel Short Period AlAs/n-GaAs Superlattice --
4. A GaAs gate heterojunction FET
5. A New Highly-Conductive (AlGa)As/GaAs/(AlGa)As Selectively-Doped Double-Heterojunction Field-Effect Transistor (SD-DH-FET)
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