Resistive switching characteristics in dielectric/ferroelectric composite devices improved by post-thermal annealing at relatively low temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4867260
Reference27 articles.
1. Ferroelectric Schottky Diode
2. Transport properties of LaTiO3+x films and heterostructures
3. Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO 3
4. A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors
5. Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p-Type Schottky-Like Pt/Bi1-δFeO3 Interfaces
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1. Accelerated Ionic Motion in Amorphous Memristor Oxides for Nonvolatile Memories and Neuromorphic Computing;Advanced Functional Materials;2018-12-17
2. Impact of the ferroelectric layer thickness on the resistive switching characteristics of ferroelectric/dielectric structures;Applied Physics Letters;2018-09-03
3. Enhanced resistive memory in Nb-doped BaTiO3 ferroelectric diodes;Applied Physics Letters;2017-07-17
4. Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer;Scientific Reports;2017-04-11
5. The effect of in situ annealing oxygen pressure on the ferroelectric resistive switching characteristic;Ceramics International;2015-07
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