Coupled‐stripe AlxGa1−xAs‐GaAs quantum well lasers defined by vacancy‐enhanced impurity‐induced layer disordering from (Si2)y(GaAs)1−ybarriers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98036
Reference19 articles.
1. High power coupled multiple stripe quantum well injection lasers
2. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
3. IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity
4. Disorder of an AlxGa1−xAs‐GaAs superlattice by donor diffusion
5. Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Introduction and Background;Monolithic Diode-Laser Arrays;1994
2. Coupled‐stripe in‐phase operation of planar native‐oxide index‐guided AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well heterostructure laser arrays;Applied Physics Letters;1992-01-06
3. Review of the Structures and Properties of Fabry–Perot Cavity Junction Lasers;Physics of Semiconductor Lasers;1991
4. Impurity‐induced layer disordering in In0.5(AlxGa1−x)0.5P‐InGaP quantum‐well heterostructures: Visible‐spectrum‐buried heterostructure lasers;Journal of Applied Physics;1989-07-15
5. Disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers by diffusion of silicon and oxygen from Al‐reduced SiO2;Applied Physics Letters;1989-03-27
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