Band bending mechanism for field emission in wide-band gap semiconductors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1511809
Reference11 articles.
1. Field penetration and band bending near semiconductor surfaces in high electric fields
2. A new surface electron-emission mechanism in diamond cathodes
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4. Low-threshold cold cathodes made of nitrogen-doped chemical-vapour-deposited diamond
5. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
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