Strong correlation between B-Al-N doping concentration fluctuation and photoluminescence effects of f-SiC
Author:
Affiliation:
1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, People’s Republic of China
2. University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China
Funder
National key Research and Development Program of China
National Key Research and Development Program of China
Shanghai Science and Technology Innovation Action Plan Program
The Young Scientists Fund of the National Nature Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5044492
Reference23 articles.
1. White light-emitting diode based on fluorescent SiC
2. Advances in wide bandgap SiC for optoelectronics
3. Magnetic properties of Mn-implanted 6H-SiC single crystal
4. Deep level centers in silicon carbide: A review
5. Review: Down Conversion Materials for Solid-State Lighting
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