Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors-Reference-Cited by-同舟云学术

Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors

Published:2017-06-05 Issue:23 Volume:110 Page:232904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lomenzo Patrick D.¹,Chung Ching-Chang²^ORCID,Zhou Chuanzhen³^ORCID,Jones Jacob L.²,Nishida Toshikazu⁴

Affiliation:

1. University of Florida, Gainesville, Florida 32611, USA

2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

3. Analytical Instrumentation Facility, North Carolina State University, Raleigh, North Carolina 27695, USA

4. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA

Funder

National Science Foundation (NSF)

Army Research Office (ARO)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4985297

Reference37 articles.

1. Ferroelectricity in hafnium oxide thin films

2. P. Polakowski , S. Riedel , W. Weinreich , M. Rudolf , J. Sundqvist , K. Seidel , and J. Mu¨ller , in 2014 IEEE 6th International Memory Workshop (IEEE, Taipei, 2014), pp. 1–4.

3. Low Temperature Compatible Hafnium Oxide Based Ferroelectrics

4. Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

5. Ferroelectricity in Gd-Doped HfO2Thin Films

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