In-situ determination of the flat band carrier concentration and surface charge density of individual semiconductor nanowires by a combination of electrical and field emission measurements-Reference-Cited by-同舟云学术

In-situ determination of the flat band carrier concentration and surface charge density of individual semiconductor nanowires by a combination of electrical and field emission measurements

Published:2017-05-05 Issue:17 Volume:121 Page:174306
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Chen Yicong¹²,Song Xiaomeng¹²,Li Zhibing¹³,Deng Shaozhi¹²,She Juncong¹²,Xu Ningsheng¹²,Chen Jun¹²^ORCID

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou, Guangdong 510275, People's Republic of China

2. School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, Guangdong 510275, People's Republic of China

3. School of Physics, Sun Yat-sen University, Guangzhou, Guangdong 510275, People's Republic of China

Funder

National key research and development program of China

Research funds of Guangzhou science technology and innovation commission

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference27 articles.

1. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

2. Novel cold cathode materials and applications

3. Nanowire transistors without junctions

4. Bandgap-Graded CdSxSe1-xNanowires for High-Performance Field-Effect Transistors and Solar Cells

5. Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires

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