Indirect light absorption model for highly strained silicon infrared sensors-Reference-Cited by-同舟云学术

Indirect light absorption model for highly strained silicon infrared sensors

Published:2021-08-07 Issue:5 Volume:130 Page:055105
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Roisin Nicolas¹^ORCID,Brunin Guillaume²^ORCID,Rignanese Gian-Marco²^ORCID,Flandre Denis¹,Raskin Jean-Pierre¹

Affiliation:

1. Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université Catholique de Louvain, Place du Levant, 3 L5.03.02, B-1348 Louvain-la-Neuve, Belgium

2. Institute of Condensed Matter and Nanosciences (IMCN), Université Catholique de Louvain, Place Louis Pasteur, 1 bte L4.01.06, B-1348 Louvain-la-Neuve, Belgium

Funder

F.R.S.-FNRS

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0057350

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