Ultraviolet absorption and photodissociation of As4
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353076
Reference14 articles.
1. Laser enhanced epitaxial growth of gallium arsenide from elemental arsenic
2. A correlation between electron traps and growth processes inn‐GaAs prepared by molecular beam epitaxy
3. The effect of arsenic vapour species on electrical and optical properties of GaAs grown by molecular beam epitaxy
4. A comparative study of the interaction kinetics of As2 and As4 molecules with Ga-rich GaAs (001) surfaces
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1. Spectroscopy of Jet-Cooled Bi3;The Journal of Physical Chemistry B;2008-11-12
2. Arsenic beam from a MBE source characterized by femtosecond laser spectroscopy;Applied Physics B;1998-05
3. Electric Dipole Polarizability of As4, a Challenging Problem for Both Experiment and Theory;The Journal of Physical Chemistry A;1998-02-01
4. The refractive index of vapour between 820 and 870 K studied by dispersive Fourier transform spectroscopy in the visible (DFTS-VIS);Journal of Physics D: Applied Physics;1996-12-14
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