Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device-Reference-Cited by-同舟云学术

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Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device

Published:2012-11-19 Issue:21 Volume:101 Page:212110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Müller Knut,Ryll Henning,Ordavo Ivan,Ihle Sebastian,Strüder Lothar,Volz Kerstin,Zweck Josef,Soltau Heike,Rosenauer Andreas

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4767655

Reference26 articles.

1. Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress

2. Exploring the limits of stress-enhanced hole mobility

3. Stress mapping in strain-engineered silicon p-type MOSFET device: A comparison between process simulation and experiments

4. Improved precision in strain measurement using nanobeam electron diffraction

5. Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy

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