Synaptic devices with sodium alginate ionic gel gating for global regulation

Author:

Liu Yifei1ORCID,Feng Guangdi1,Zhu Qiuxiang1ORCID,Xu Yu1,Hao Shenglan1ORCID,Qu Ke1ORCID,Tian Bobo1ORCID,Duan Chungang1ORCID

Affiliation:

1. Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University , Shanghai, China

Abstract

Information processing and memorizing in the brain take place in a neural network consisting of neurons connected with each other by synapses. Meanwhile, the neural network is immersed in a common electrochemical environment with global parameters regulating the overall functions, which is barely discussed in neuromorphic devices. In this study, organic/inorganic hybrid transistors with sodium alginate as the gate dielectric layer and indium tin oxide as the channel were successfully prepared. We have not only simulated the basic properties of synapses in a single device, but, on top of that, also simulated the global regulation of information processing in the brain due to the incorporation of global grids, achieving excitatory and inhibitory synaptic weight. Moreover, the construction of a 3 × 3 synaptic array enables image learning and memorizing functions. These results demonstrate the significant advantages of electrolyte-gated transistors in enabling complex neural network connectivity and offer a promising opportunity for future artificial synapses.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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