Origins of the enhanced broadband absorption in black silicon-Reference-Cited by-同舟云学术

Origins of the enhanced broadband absorption in black silicon

Published:2021-04-28 Issue:16 Volume:129 Page:163103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kecebas Muhammed Ali¹^ORCID,Pirouzfam Niloufar¹^ORCID,Sendur Kursat¹²^ORCID

Affiliation:

1. Faculty of Engineering and Natural Science, Sabanci University, Istanbul 34956, Turkey

2. Center of Excellence for Functional Surfaces and Interfaces, Sabanci University, Istanbul 34956, Turkey

Funder

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0047153

Reference68 articles.

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3. Study On Laser-Induced Periodic Structures And Photovoltaic Application

4. Study of the properties of new SPM detectors

5. J. E. Carey and E. Mazur, “High sensitivity silicon-based VIS/NIR photodetectors,” in Conference on Lasers and Electro-Optics, 2004 (CLEO) (IEEE, 2004), Vol. 2, p. 2.

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