Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4773511
Reference22 articles.
1. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
2. Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal
3. Above 600 mS/mm Transconductance with 2.3 A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon
4. Superior Pinch-Off Characteristics at 400°C in AlGaN/GaN Heterostructure Field Effect Transistors
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1. Space–Charge‐Limited Photocurrent as a Possible Cause for Low Power Conversion Efficiency in GaInN/GaN‐Based Optoelectronic Semiconductors;physica status solidi (a);2024-03-14
2. Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications;Applied Physics Express;2024-01-01
3. Electrical characterization of AlGaN/GaN heterostructures under Ohmic metals by using multi-probe Hall devices;Applied Physics Letters;2021-07-12
4. Optimization of Au-Free Ohmic Contact Based on the Gate-First Double-Metal AlGaN/GaN MIS-HEMTs and SBDs Process;IEEE Transactions on Electron Devices;2018-02
5. Improved Ohmic Contact by Pre-Metallization Annealing Process in Quaternary In0.04 Al0.65 Ga0.31 N/GaN HEMTs;physica status solidi (a);2018-01-08
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