Dopant-defect interactions in Mg-doped GaN via atom probe tomography
Author:
Affiliation:
1. Department of Materials Design and Innovation, University at Buffalo, Buffalo, New York 14260, USA
2. College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0061153
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5. Vacancy defects in bulk ammonothermal GaN crystals
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