Leakage current characteristics of Pt∕Bi3.25La0.75Ti3O12∕Pt thin-film capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1915533
Reference25 articles.
1. Ferroelectric Memories
2. Active ancestral molecules
3. Lanthanum-substituted bismuth titanate for use in non-volatile memories
4. Ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 Films of Uniform a -Axis Orientation on Silicon Substrates
5. Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition
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4. Leakage mechanisms in rare-earth (La, Nd) doped Bi4Ti3O12 ferroelectric ceramics;Journal of Materials Science: Materials in Electronics;2014-01-28
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