Gate-controlled electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1631082
Reference15 articles.
1. Electron g factor engineering in III-V semiconductors for quantum communications
2. Electrical control of spin coherence in semiconductor nanostructures
3. Gate-controlled electron spin resonance inGaAs/AlxGa1−xAsheterostructures
4. Effects of a Tilted Magnetic Field on a Two-Dimensional Electron Gas
5. InAs-AlSb quantum wells in tilted magnetic fields
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