Formation of (100)GaAs on (100) silicon by laser recrystallization
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96853
Reference12 articles.
1. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
2. Antiphase domain structures in GaP and GaAs epitaxial layers grown on Si and Ge
3. Low-temperature epitaxial growth of GaAs on (100) silicon substrates
4. Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy
5. Reduction of oxides on silicon by heating in a gallium molecular beam at 800 °Ca)
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1. Single-Crystal GaAs and GaSb on Insulator on Bulk Si Substrates Based on Rapid Melt Growth;IEEE Electron Device Letters;2010-06
2. Effect of film thickness and laser energy density on the microstructure of a-GaAs films after excimer laser crystallization;Journal of Applied Physics;2007-07
3. Laser-induced epitaxial recrystallization after alkali-ion implantion into α-quartz;Applied Surface Science;2005-07
4. Growth of GaAs epitaxial layers on porous silicon;Microelectronics Journal;1996-07
5. Effect of ion dose rate on rapid laser annealing of implanted GaAs;Journal of Electronic Materials;1996-01
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