A single-electron probe for buried optically active quantum dot
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4738368
Reference21 articles.
1. Shell structures in self-assembled InAs quantum dots probed by lateral electron tunneling structures
2. Coulomb blockade in a self-assembled GaN quantum dot
3. Electric-field control of tunneling magnetoresistance effect in a Ni∕InAs∕Ni quantum-dot spin valve
4. Spin-half Kondo effect in a single self-assembled InAs quantum dot with and without an applied magnetic field
5. High Kondo temperature (TK∼80K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Single-electron charge sensing in self-assembled quantum dots;Scientific Reports;2018-09-18
2. Nanogap Resistance Random Access Memory Based on Natural Aluminum Oxide;Japanese Journal of Applied Physics;2013-04-01
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