Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(033̄8)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1529313
Reference14 articles.
1. High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face
2. Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face
3. High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
4. Interface States of SiO2/SiC on (11-20) and (0001) Si Faces
5. Intrinsic SiC/SiO2 Interface States
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